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Brittle Material Substrate: Sapphire

Case 1: Lapping/Polishing Sapphire Wafers

Lapping/Polishing Sapphire Wafers Recently, the diameters of sapphire, silicon carbide (SiC), and gallium nitride (GaN) wafers used as LED substrates have rapidly become larger. We developed the equipment and process for larger-diameter sapphire wafers that especially require cost reduction, and succeeded in stabilizing the quality of the wafers and reducing the process cost.

Lapping/Polishing Process and Method

Lapping/Polishing Process and Method

Process Result

Process Result

3 inch wafer
TTV BOW WARP: <20 µm
Thickness: +/-10 µm
Surface roughness: Ra:0.5 µm or less
Value measured by AFM: 0.2 µm or less